Khoom Core

High Purity ISO Graphite yog tsim los ntawm Cold Isostatic Pressing (CIP) kom ua tiav 3D uniform densification nyob rau hauv ultra-siab siab (140-200 MPa). Made from petroleum coke purified at over 2500℃, it exhibits near-theoretical density and excellent isotropy, ensuring stable performance across diverse applications.

Technical Parameters

Parameter	Tus nqi tseem ceeb
Qhov ntom	1.80-1.92 g / cm³
Tshauv Ntsiab Lus	Tsawg dua lossis sib npaug li 100 ppm
Anisotropy ratio	1.0–1.05
Coefficient ntawm Thermal Expansion (CTE)	4.2–5.0 × 10⁻⁶/K (RT–400 degree)
Purity	C Ntau dua lossis sib npaug li 99.9%
Thermal conductivity	110–130 W/(m·K)
Flexural zog	55-85 MPa

Cov khoom txhawb nqa tus kheej customization.

Cov yam ntxwv tseem ceeb

Ultra-siab purity: Ultra-tsawg tshauv/hlau impurities (Fe, Ca, Na), ICP-MS verified, haum impurity- rhiab teb.
Excellent density: High bulk density, low porosity, boosting thermal conductivity and mechanical capacity.
Isotropy: Tsawg qhov sib txawv ntawm thermal expansion / flexural zog hla cov lus qhia.
Cov cua kub tsis kam: ruaj khov ntawm qhov kub siab hauv cov cua tsis zoo (txheej txheej xav tau nyob rau hauv oxidizing ib puag ncig saum cov temps tshwj xeeb).
Thermal shock tsis kam: Nrog kev hloov pauv sai yam tsis muaj kev tawg.
Precision machinability: High Purity ISO Graphite nta nruj tolerances thiab tuaj yeem ua tiav rau hauv qhov nyuaj (turbine disks, crucibles).

Cov ntawv thov tseem ceeb

Semiconductor: Monocrystalline silicon furnace thermal Cheebtsam / wafer nqa (siab temp-kuj, ultra-tsis muaj impurities).
Photovoltaic: Polysilicon ingot crucibles / heaters (tiv thaiv silicon yaj yaig).
Nuclear zog: High-kub roj-cooled reactor neutron reflectors (raws li nuclear- qib specs).
Aerospace: Rocket nozzle caj pas inserts/missile fins (tiv taus siab heev -temp ablation).
High-kawg metallurgy: Titanium alloy melting crucibles (reusable, tsis to).
Cov cuab yeej siv: EDM electrodes / siab -kub qhov cub qhov tseem ceeb.

Ntawv pov thawj & Customization

High Purity ISO Graphite raws li SEMI F76 (semiconductor), ISO 8005 (nuclear), EN 10298 / ASME BPVC (kev nyab xeeb), thiab RoHS 3.0 (ib puag ncig) cov qauv. Cov kev pabcuam kev cai muaj xws li: silicidation (txhim kho oxidation tsis kam), theem nrab impregnation (kom txhawb nqa qhov ntom), thiab ultra-cov qauv zoo kom zoo (kom txhim kho toughness).